This paper presents an optimized doping strategy for vertical-channel three-dimensional (3D) NAND flash. This NAND flash is junction-free without dopant inside the string. Source side near SSL and ...

The presented results can provide useful insights into the reliability of modern charge-trap NAND flash and guide the design of flash management algorithms in the NAND controller.

In this work, we experimentally demonstrate a NAND-like spin-torque memory unit with the interplay of STT and SOT. The spin joint effect induced magnetic reversal is verified to be more ...

Often taken for granted, solid-state semiconductor memory is the enabler of the contemporary digital world. Today's memory chips pack billions of transistors onto single slivers of silicon and push ...

In this paper, sub-threshold region I-V model for poly-Si based macaroni structure in 3D NAND Flash memories is presented. The model is based on analytical I-V solution for macaroni structure which ...

We propose an electron back-tunneling (EBT) method to enhance the retention characteristics of vertical NAND (V-NAND) flash memory. The storage of back-tunneled electrons in the spacer region between ...